Method for forming a top interconnection level and bonding pads on an integrated circuit chip

ABSTRACT

A method for forming a top interconnection level and bonding pads for an integrated circuit chip is described. The interconnection level is formed by a damascene type process. Bonding pads are placed above the plane of the wiring channels of the interconnection level. This eliminates the problem of dishing of the relatively large bonding pads which occurs, during chemical mechanical polishing, when the bonding pads are on the same level as the interconnection metallurgy. The interconnection wiring includes a smaller pad base segment upon which the larger bonding pad is then formed. The bonding pad base segments are small enough that dishing during CMP is not a problem. Placing the bonding pads on pad bases provides for a more robust pad. The top level and bonding pad fabrication procedures are applicable with various conductive materials including aluminum, tungsten, and copper.

BACKGROUND OF THE INVENTION

(1) Field of the Invention

The invention relates to processes for the manufacture of semiconductordevices and more particularly to the formation of terminal metal layersand bonding pads.

(2) Background of the Invention and Description of Prior Art

Integrated circuits are manufactured by forming discrete semiconductordevices in the surface of silicon wafers. A multi-level metallurgicalinterconnection network is then formed over the devices, contactingtheir active elements, and wiring them together to create the desiredcircuits, The wiring layers are formed by depositing an insulating layerover the discrete devices, patterning and etching contact openings intothis layer, and then depositing conductive material into the openings. Aconductive layer is applied over the insulating layer and patterned toform wiring interconnections between the device contacts, therebycreating a first level of basic circuitry. The circuits are then furtherinterconnected by utilizing additional wiring levels laid out overadditional insulating layers with conductive via pass throughs.

Depending upon the complexity of the overall integrated circuit, severallevels of wiring interconnections are used. On the uppermost level thewiring is terminated at metal pads to which the chip's external wiringconnections are bonded. These bonding pads are generally large in sizecompared to the interconnection wiring lines, typically measuring largerthan about 50×50 microns.

A method for forming the uppermost or top interconnection layer is thedamascene process, whereby openings and trenches, comprising an image ofthe interconnection pattern are formed in an insulative layer. A metallayer is then deposited into the openings and over the insulative layer.Finally, the metal is polished back to the insulative layer leaving themetal pattern inlaid within the insulative layer. Polishing back of themetal layer is accomplished by CMP (chemical mechanical polishing), arelatively old process which has found new application in planarizationof insulative layers and more recently in the damascene process. In asingle damascene process a metal line pattern is generated whichconnects to subjacent vias or contacts. In a dual damascene process,both vias and contacts and an interconnection stripe pattern are formedby a single metal deposition and CMP. A description of both single anddual damascene processes may be found in Chang, C. Y. and Sze, S. M.,“ULSI Technology” McGraw-Hill, New York, (1996), p444-445 and inEl-Kareh, B., “Fundamentals of Semiconductor Processing Technologies”,Kluwer, Boston(1995), p56-34.

Carey, et. al., U.S. Pat. No. 5,219,787 shows a method for forming viasand wiring lines in a polyimide base by first forming a trench and viapattern in polyimide layers, depositing a copper seed layer, and thenplating copper. The copper is polished back to the polyimide leavingmetallization in the trenches and vias. Matsuura, U.S. Pat. No.5,598,027 cites a metal deposition/polish back (damascene) method forforming interconnection layers using dry etching to form grooves in theinsulating layers. After the interconnection material is deposited, thesurface is polished back by CMP leaving the conductive pattern in thegrooves.

The metal wiring layers, typically of an aluminum alloy or of analuminum alloy containing copper and silicon, are deposited bysputtering or by vacuum evaporation. In the damascene process, coppermetallization may also be used. The final metal interconnection layerincludes the bonding pads which are typically located in the peripheryof the integrated circuit. When large area features, such as bondingpads, are included in a damascene processed wiring pattern, a problem ofbonding pad dishing arises when the metal is polished back to theinsulative layer. Referring to FIG. 1 there is shown a planar view of aportion of the top metallization level of an integrated circuit on awafer 20. A bonding pad 24 and wiring lines 26 lie embedded in aninsulating layer 22. FIG. 1 is not drawn to scale. The pad 24 is of theorder of 50 by 50 microns square or larger and the wiring lines 26 areonly of the order one micron or less in breadth.

A cross section of the region on wafer 20 indicated by the line 2-2′ isshown in FIG. 2A at the point in the process after a metal layer 25 hasbeen deposited onto the patterned insulative layer 22. The wide portionof metal 24 in the insulator is to become a bonding pad. When thesubstrate wafer is polished by CMP, the surfaces of the wide metalbonding pads tend to become dished as illustrated by the curvature 28 inFIG. 2B.

The dishing weakens the pad, by creating a thin central region. Asubsequently attached wire bond will not only be weak mechanically, butalso excessively resistive. A passivation layer 29 is applied over thelayer 22 and the metal pattern. The passivation layer 29 seals theinterconnection metallization on the wafer from contaminants andmoisture, and also serves as a scratch protection layer. The passivationlayer 29 typically consists of a layer of silicon nitride or a compositelayer of phosphosilicate glass (PSG) over silicon oxide. The layer 29 isdeposited by plasma enhanced chemical vapor deposition (PECVD). Anopening 28 to the bonding pad is patterned and etched in the passivationlayer 29 by a plasma etching process.

Weakening of the bonding pad caused by the CMP dishing is reflected byhigh yield losses at wafer acceptance testing (WAT) and at subsequentpackage stress testing. These yield losses also forewarn a reliabilitydegradation. Dummy pads are sometimes added on the interconnection levelto counteract CMP dishing. These pads are sacrificial and are notconnected to interconnection lines. This awkward fix also lowers theintegrity of the interconnection lines.

An alternative method for forming the top interconnection layer,including the bonding pads is to deposit and pattern the metal layer onthe un-patterned surface of the insulative layer 22. The passivationlayer is then deposited over the metal pattern. This is an older method,a predecessor of the damascene method, and is not favorably compatiblewith current high density multilevel interconnection technology becauseit produces a higher resistance, and higher defect densities.

SUMMARY OF THE INVENTION

Accordingly, it is an object of this invention to provide a method forforming a top interconnection level of a multilevel integrated circuitincluding bonding pads.

It is another object of this invention to provide a method for forming atop interconnection level of a multilevel integrated circuit by adamascene process with bonding pads formed by an etch process.

It is yet another object of this invention to provide a method forforming a top interconnection level of a multilevel integrated circuitincluding conductive base segments for bonding pads by a damasceneprocess.

It is still another object of this invention to provide a method forforming a top interconnection level of a multilevel integrated circuitwherein the bonding pads connected to the level are elevated above thelevel thereby reducing the impact of environmental or other externalelectrical disturbances on the interconnection level.

It is yet another object of this invention to provide a method forforming a top interconnection level of a multilevel integrated circuitwithout the occurrence of dishing of the bonding pads.

It is yet another object of this invention to eliminate the need fordummy bonding pads on a top interconnection level of a multilevelintegrated circuit.

These objects are accomplished by first forming the necessary wiringchannels of the top interconnection level by patterning trenches andvias in an insulative layer. Bonding pads are not patterned in thisinsulative layer but segments of interconnection lines which form basesfor connecting bonding pads are included. The base segments may besimple terminations of the interconnection wiring or they may beoversized terminations having dimensions somewhat larger than theinterconnection line width but much smaller than those of the bondingpads. The interconnection metallurgy is then deposited. In a firstembodiment, the interconnection metallurgy is polished back to theinsulative layer surface by CMP and a second metal layer is deposited.Bonding pads are then patterned in the second metal layer by plasmaetching.

In a second embodiment, the deposited interconnection metallurgy ispartially polished back by CMP to planarize the surface. Bonding padsare then patterned on the residual conductive layer and the layer isetched back to the insulative layer surface, leaving the bonding pads onthe surface of the insulative layer, connected to the subjacent Wiringlevel through the access openings. This method is limited tometallurgies which lend themselves to dry plasma etching such asaluminum, aluminum alloys, and tungsten. The bonding pads may then beformed of another metal such as aluminum or tungsten. An advantage ofboth embodiments is that the thickness of the bonding pads isindependent of the thickness of the interconnection level.

A passivation layer is deposited over the exposed top interconnectionlevel and bonding pads and patterned to form openings over the bondingpads. Bonding pads formed by the methods of the embodiments are robustand flat. Because the bonding pads lie above the top interconnectionlevel the risk of wire bonding damage to the interconnection level isdiminished.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a planar view of a portion of a top interconnection level of amultilevel integrated circuit showing a bonding pad and wiring lines.

FIG. 2A is a cross section of a portion of a multilevel integratedcircuit shown in FIG. 1 showing a metal layer deposited over anarrangement of vias and trenches patterned in an insulative layer.

FIG. 2B is a cross section of a portion a multilevel integrated circuitshowing the metal layer of FIG. 2. polished back by CMP and covered by apatterned passivation layer.

FIG. 3 is a planar view of a portion of a top interconnection level of amultilevel integrated circuit showing a bonding pad base and wiringlines formed by the process taught by the embodiments this invention.

FIG. 4A and FIG. 4B are cross sections used to illustrate a firstsequence of processing steps leading to the formation of a conductivelayer from which a top interconnection level for an integrated circuitis to be formed by the embodiments of the current invention.

FIG. 5A and FIG. 5B are cross sections used to illustrate a secondsequence of processing steps leading to the formation of a conductivelayer from which a top interconnection level for an integrated circuitis to be formed by the embodiments of the current invention.

FIG. 6A through FIG. 6D are cross sections illustrating the sequence ofprocessing steps leading to the formation a top interconnection wiringlevel with bonding pads according to a first embodiment of the currentinvention.

FIG. 7A through FIG. 7B are cross sections illustrating the sequence ofprocessing steps leading to the formation a top interconnection wiringlevel with bonding pads according to a second embodiment of the currentinvention.

FIG. 8 is a planar view of a portion of a top interconnection level of amultilevel integrated circuit showing a bonding pad and wiring linescovered by a passivation layer formed according to the processes taughtby this invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

In a first embodiment of this invention a top interconnection level isformed by metal deposition onto a insulative layer patterned withtrenches. In addition to trenches for top level interconnection lines,the pattern in the insulative layer includes a bonding pad base segmentat the termination of one of the interconnection lines. The metal layeris polished back to the insulative layer by CMP leaving a metal patternin the insulative layer. A planar view of a portion of the in theinsulative layer with the inlaid metal pattern is shown in FIG. 3. Twoprocessing paths will be described to form the inlaid metal patternshown in FIG. 3. The first path will be using a single damascene processover an insulative layer with conductive vias. The second path will be adual damascene process.

In FIG. 3 there is shown a line 50 which is a conductor of a topinterconnection level on a substrate wafer 30. The conductive line 52connects a portion of a subjacent integrated circuit to a bonding padbase segment 54 and is inlaid in an insulative layer 38. In FIG. 3 abonding pad base segment 54 is shown at the termination of theconductive line 52 and is described thus in the embodiments. However, itis contemplated that the bonding pad base segment 54 may also be locatedat any position along the length of the conductive line 52 and thus beconsidered as a segment of the conductive line 52. The bonding pad basesegment 54 described in the embodiments is rectangular and between about1 and 10 microns wide and between about 1 and 10 microns long, thelength being understood to be along the linear direction of theconductive line. The conductive lines 50, 52 are between about 0.2 and2.0 microns wide. The bonding pad base segment 54 may be of the samewidth as or wider than the conductive line 52. In FIGS. 3, 6, and 7 thepad base segment 64 is shown wider than the conductive lines 50, 52.However, it is contemplated in this invention, that the width of thebonding pad base segment 54 may be comparable to the width of theconductive line 52.

Referring to the cross section shown in FIG. 4A, a silicon wafersubstrate 30 is provided. Integrated circuit devices (not shown) areformed in the silicon wafer substrate using conventional state of theart process technology. A plurality of interconnection levels are formedover the wafer 30 separated by insulative layers and interconnectedthrough contacts and vias using integrated circuit processes well knownby those skilled in the art. These layers and interconnection levels arenot shown in the figures and are understood to be included in thesubstrate 30. The upper surface of substrate 30 is insulative and ametal interconnective stripe 32 is formed over the insulative surface.The metal interconnective stripe 32 is a portion of the uppermost of theplurality of interconnection levels, is patterned by conventionalmethods, and is between about 0.3 and 0.7 microns thick.

An insulative layer 34 is formed over the metal stripe 32 and aconductive via 36 is formed in an opening in the insulative layer 34.The insulative layer 34 is deposited to a thickness of between about 0.8and 1.5 microns. Methods for depositing insulative layers and formingconductive vias are well known in the art. An insulative layer 38 isnext deposited over the insulative layer 34, preferably by PECVD, and apattern of trenches 40 is etched in the insulative layer 38, by plasmaetching. The trench pattern is an image of the metal pattern shown inFIG. 3. The insulative layer 38 is between about 0.3 and 1.0 micronsthick. The via 36 is exposed by the etching. Referring now to FIG. 4B, aconductive layer 42 is deposited over the wafer 30. The conductive layer42 used in the embodiment is an aluminum alloy and is between about4,000 and 20,000 Angstroms thick. Alternately, other metals for exampletungsten or copper, may be used.

Alternatively, the configuration shown by the cross section of FIG. 4Bmay be formed by a dual damascene process which is now described.Referring to FIG. 5A a silicon wafer substrate 30 is provided.Integrated circuit devices (not shown) are formed in the silicon wafersubstrate using conventional state of the art process technology. Aplurality of interconnection levels are formed over the wafer 30separated by insulative layers and interconnected through contacts andvias using integrated circuit processes well known by those skilled inthe art. These layers and interconnection levels, not shown in thefigures, are inferred to be included in the substrate 30. The uppersurface of substrate 30 is insulative and a metal interconnective stripe32 is formed over the insulative surface. The metal interconnectivestripe 32 is a portion of the uppermost of the plurality ofinterconnection levels, is patterned by conventional methods, and isbetween about 0.3 and 0.7 microns thick.

An insulative layer 134 is formed over the metal stripe 32. by PECVD.The insulative layer 134 is between about 1.2 and 2.0 microns thick.Methods for depositing insulative layers and forming conductive vias arewell known in the art. By dual masking and etching procedures, wellknown in dual damascene processing, a deep via 40A is formed over themetal line 32 and shallow trenches 40,40A are formed to complete theinterconnection pattern. The shallow trenches 40,40A are between about0.3 and 1.2 microns deep.

Referring to FIG. 5B, a conductive layer 42 is deposited over the wafer30. The conductive layer 42 used in the embodiment is an aluminum alloyand is between about 4,000 and 20,000 Angstroms thick. Alternately,other metals for example tungsten or copper, may be used. The conductivelayer 42 fills the deep via 40A as well as the shallow interconnectionlines 40. The process steps for a single damascene process as shown inFIGS. 4A and 4B and those for a dual damascene processing steps shown inFIGS. 5A and 5B are considered equivalent with respect to the subsequentprocessing steps of the embodiments of this invention. The configurationresulting from the dual damascene process (FIG. 5B) will be used todescribe the remainder of the processing steps of the currentembodiment, although the configuration shown in FIG. 4B mayalternatively be used. The cross sections of FIG. 4B, 5B, and those inFIG. 6A through FIG. 6D are along the line 4-4′ of the planar view shownin FIG. 3.

Referring to FIG. 6A, the conductive layer 42 is polished back by CMP tothe surface of the insulative layer 134 leaving a metal pattern inlaidin the insulative layer 134. CMP is the preferred method, particularlyif the layer 42 is copper or a copper alloy. Alternately, the conductivelayer 42 may be etched back to the surface of the insulative layer 134by plasma etching. The metal features 50, 52, 54 are the cross sectionsof the corresponding metal features in FIG. 3.

Referring to FIG. 6B a silicon oxide etch stop layer 56 is depositedover the insulative layer 134 and an opening 57 is patterned to exposethe bonding pad base segment 54. The etch stop layer 56 is between about200 and 1,000 Angstroms thick and is deposited by PECVD. The patterningof the opening 57 is done using photoresist patterned by a block-outmask which does not require critical alignment. Alternately, the etchstop layer 56 may be formed of silicon nitride or of silicon oxynitride.

A conductive layer 58 is deposited over the etch stop layer 56. Theconductive layer 58 is formed of aluminum and is between about 0.2 and0.8 microns thick. Alternately the conductive layer 58 may be formed ofanother conductive material, for example, an aluminum alloy, tungsten,copper or a copper alloy. A photoresist layer 59 is deposited over theconductive layer 58 and patterned to protect a region of the conductivelayer 58 which is to become a bonding pad.

Referring next to FIG. 6C, the conductive layer 58 is etched, preferablyby plasma etching. Methods and chemistries for etching aluminum and itsalloys by a reactive plasma are well known to those in the art. Etchantscontaining chlorine or bromine are widely used. Alternately, if theconductive layer 58 comprises a metal such as copper, a wet etchingprocedure may be preferred for patterning, for example by nitric acid orby etchants containing ammonium or ammonium related ions. The dimensionsof the bonding pad 60 are generally of the order of tens of microns anda slight amount of undercutting which occurs during wet etching willhave negligible impact on the bonding pad integrity. In the currentembodiment the bonding pad is rectangular and between about 40 and 100microns on a side. The surface of the interconnection pattern isproperly protected from the wet etch by the etch stop layer 56.

Referring to FIG. 6D, a passivation layer 62 is deposited over the wafer30 and the bonding pad 60 is exposed by patterning and etching anopening 64 in the passivation layer 62. The passivation layer 62 isformed as a composite layer of a silicon nitride layer deposited over asilicon oxide layer. The depositions are made by PECVD using precursorsand deposition parameters well known by those in the art. Thepassivation layer 62 is between about 1.0 and 2.0 microns thick.Alternatively a phosphosilicate glass(PSG) layer may be used in place ofsilicon nitride to form the upper portion of the passivation layer 62.In practice the passivation layer may be of any composition or formwhich provides a protective coating over the integrated circuit. Theopening 64 is patterned with photoresist and etched by plasma etchingusing etchants and etching conditions well known to those in the art.

FIG. 8 shows a planar view of the completed structure. The dotted line76 shows the bonding pad 60 extending beneath the passivation layer 62at the edges of the opening 64. The interconnection lines 50,52, beneaththe passivation layer 62 are also shown as dotted lines. The crosssections shown in FIG. 6A through FIG. 6D are along the line 6-6′ inFIG. 8.

In a second embodiment of this invention a top interconnection level isformed by metal deposition onto a patterned insulative layer. The metallayer is planarized by CMP but not polished entirely back to theinsulative layer. Bonding pads are then patterned into the remainingmetal layer by plasma etching. Finally a passivation layer is depositedand patterned to form openings to the bonding pads.

Referring to FIG. 7A a silicon wafer substrate 30 is provided.Integrated circuit devices (not shown) are formed in the surface of thesilicon wafer substrate using conventional state of the art processtechnology. A plurality of interconnection levels are formed over thewafer 30 separated by insulative layers and interconnected throughcontacts and vias using integrated circuit processes well known by thoseskilled in the art. These layers and interconnection levels are notshown in the figures but are inferred to be included in the substrate30. The upper surface of substrate 30 is insulative and a metalinterconnective stripe 32 is formed over the insulative surface. Themetal interconnective stripe 32 is a portion of the uppermost of theplurality of interconnection levels, is patterned by conventionalmethods, and is between about 0.3 and 0.7 microns thick. The wafer 30 isprocessed in the same manner as in the first embodiment to achieve theconfiguration shown in cross section by FIGS. 4B or 5B. The crosssections of FIGS. 4B, 5B, and those in FIG. 7A and 7B are all along theline 4-4′ of the planar view shown in FIG. 3.

The configuration shown in FIG. 4B and that shown in FIG. 5B, achievedby dual masking and etching steps of a single insulative layer areconsidered equivalent with respect to the subsequent processing steps ofthe embodiments of this invention. The configuration resulting from thedual masking process (FIG. 5B) is used to describe the remainder of theprocessing steps of the current embodiment, although the configurationshown in FIG. 4B may alternatively be used. The conductive layer 42 usedin this embodiment is an aluminum alloy. Alternately, other metals forexample tungsten, copper, or alloys of aluminum or copper may be used.Conductive layer 42, as shown in FIG. 5B, has a as-deposited thicknessof between about 4,000 and 20,000 Angstroms.

Referring now to FIG. 7A, conductive layer 42, which has been depositedon the patterned insulative layer 134, is planarized and polished to athickness d of between about 0.2 and 0.8 microns by CMP. Photoresist 70is deposited and patterned to protect a region of polished conductivelayer 42 which is to become a bonding pad. Referring to FIG. 7B,Conductive layer 42 is etched by RIE or by plasma etching to expose thesubjacent insulative layer 134. The photoresist 70 is stripped by eitherplasma ashing or by conventional resist strippers, leaving the completedbonding pad 72.

Although the second embodiment forms the bonding pad and the topinterconnection level from a single conductive layer deposition, the useof an etch stop layer as exercised in the first embodiment is notpermitted. It is therefore critical that excessive over etching isavoided in the conductive layer 42 etch which defines the bonding pad72. A suitable etchant must therefore have a high selectivity of metalversus oxide. Such etchants are well known and can be tailored toachieve optimum selectivity. A preferred etchant is one containing Cl₂,BCl₃, and CHF₃ in an argon carrier gas. This etchant can achieve an etchrate selectivity of greater than 5:1.

A passivation layer 62 is deposited over the wafer 30 and the bondingpad 72 is exposed, for subsequent wire bonding, by patterning andetching an opening 64 in the passivation layer 62. The passivation layer62, is formed as a composite layer of a silicon nitride layer depositedover a silicon oxide layer. The depositions are made by PECVD usingprecursors and deposition parameters well known by those in the art. Thepassivation layer 62 is between about 1.0 and 2.0 microns thick.Alternatively a phosphosilicate glass(PSG) layer may be used in place ofsilicon nitride to form the upper portion of the passivation layer 62.In practice the passivation layer may be of any composition or formwhich provides a protective coating over the integrated circuit. Theopening 64 is patterned with photoresist and etched by plasma etchingusing etchants and etching conditions well known to those in the art.

FIG. 8 shows a plan view of the completed structure. The dotted line 76shows the bonding pad 72 extending beneath the passivation layer 62 atthe edges of the opening 64. The interconnection lines 50,52, beneaththe passivation layer 62 are also shown as dotted lines. The crosssections shown in FIG. 7A and FIG. 7B are along the line 6-6′ in FIG. 8.

While the invention has been particularly shown and described withreference to the preferred embodiments thereof, it will be understood bythose skilled in the art that various changes in form and details may bemade without departing from the spirit and scope of the invention.

What is claimed is:
 1. A method for forming a bonding pad comprising: (a) providing a substrate with an insulative layer; (b) patterning a trench in said insulative layer; (c) depositing a first layer of conductive material on said insulative layer; (d) polishing said first layer of conductive material until said insulative layer is exposed, while leaving conductive material in said trench, thereby forming a conductive stripe embedded in said insulative layer; (e) depositing an etch stop layer on said substrate; (f) patterning said etch stop layer to form an opening exposing a segment of said conductive stripe to which a bonding pad is to be directly connected; (g) depositing a second layer of conductive material on said etch stop layer; and (h) patterning said second layer of conductive material to form a bonding pad over said opening and connected to said segment, said bonding pad being rectangular and having planar length and width dimensions of between about 40 and 100 microns whereby said bonding pad extends over said etch stop layer and connects to a said segment through said opening.
 2. The method of claim 1 wherein said insulative layer is silicon oxide.
 3. The method of claim 1 wherein said first layer of conductive material is selected from the group consisting of aluminum, copper, tungsten, an aluminum alloy, and a copper alloy.
 4. The method of claim 1 wherein said etch stop layer is selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride.
 5. The method of claim 1 wherein said conductive stripe is between about 0.2 and 2.0 microns wide and said segment is rectangular having a length of between about 1 and 10 microns as measured in the direction parallel to said conductive stripe, and a width of between about the width of said conductive stripe and 10 microns.
 6. The method of claim 1 wherein said second layer of conductive material is selected from the group consisting of aluminum, copper, tungsten, an aluminum alloy, and a copper alloy.
 7. The method of claim 1 wherein said second layer of conductive material is between about 0.2 and 0.8 microns thick.
 8. A method for forming a top interconnection level and bonding pads of an integrated circuit comprising: (a) providing a silicon wafer substrate having integrated circuit devices and a first interconnection level; (b) depositing an insulative layer on said substrate; (c) forming trenches and via openings exposing elements of said first interconnection level in said insulative layer; (d) depositing a first layer of conductive material on said insulative layer; (e) polishing said first layer of conductive material until said insulative layer is exposed, while leaving conductive material in said trenches and said via openings, thereby forming a second interconnection level containing conductive lines embedded in said insulative layer with a plurality of segments to which bonding pads are to be directly connected; (f) depositing an etch stop layer on said substrate; (g) patterning said etch stop layer to form a plurality of openings, each one of said plurality of openings exposing one of said plurality of segments; (h) depositing a second layer of conductive material on said etch stop layer; (i) patterning said second layer of conductive material to form a bonding pad over each one of said plurality of openings; thereby forming a plurality of bonding pads, each one of said plurality of bonding pads being rectangular and having planar length and width dimensions of between about 40 and 100 microns, whereby each one of said bonding pads extends over said etch stop layer and is connected to a corresponding segment through a corresponding opening; (j) depositing a passivation layer; and (k) patterning and etching said passivation layer to form an access opening over each one of said plurality of bonding pads.
 9. The method of claim 8 wherein said insulative layer is silicon oxide.
 10. The method of claim 8 wherein said first layer of conductive material is selected from the group consisting of aluminum, copper, tungsten, an aluminum alloy, and a copper alloy.
 11. The method of claim 8 wherein said etch stop layer is selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride.
 12. The method of claim 8 wherein said conductive lines are between about 0.2 and 2.0 microns wide and said segments are rectangular having a length of between about 1 and 10 microns measured parallel to the local linear direction of the conductive lines and a width of between about the width of the conductive line and 10 microns.
 13. The method of claim 8 wherein said second layer of conductive material is selected from the group consisting of aluminum, copper, tungsten, an aluminum alloy, and a copper alloy.
 14. The method of claim 8 wherein said second layer of conductive material is between about 0.2 and 0.8 microns thick.
 15. The method of claim 8 wherein said passivation layer is between about 1 and 2 microns thick. 